Home Physics Semiconductor Electronics Statement Based Statement I: An electron on -side of a jun…
Physics Semiconductor Electronics Statement Based MCQ (Single Correct)

Statement I: An electron on -side of a junction moves to -side just an instant after drifting of charge carriers occurs across junction plane.
Statement II: Drifting of charge carriers reduces the concentration gradient across junction plane.
In the light of the above statements, choose the most appropriate answer from the options given below.

A
Both Statement I and Statement II are incorrect.
B
Statement I is correct but Statement II is incorrect.
C
Statement I is incorrect but Statement II is correct.
D
Both Statement I and Statement II are correct.

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Text Solution

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The correct answer is:
B

Statement I is correct but Statement II is incorrect.

Due to diffusion of electrons, positive space-charge region on -side of the junction and negative space charge region on -side of the junction, an electric field directed from positive charge towards negative charge develops. Electric field is from -side to -side. Due to this field, an electron on -side of the junction moves to -side and a hole on -side of the junction moves to -side. The motion of charge carriers due to the electric field is called drift. Thus, a drift current, which is opposite in direction to the diffusion current starts. Concentration gradient is due to doping of sides. It is not affected by drift of charge carriers.

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